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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC2412K*LT1
* Pb-Free Package is Available.
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1 BASE 3 COLLECTOR
3
1 2 2 EMITTER
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V
EBO
SOT- 23
Value 50 60 7.0 150 0.2 150 -55 ~+150
Unit V V V mAdc W C C
ORDERING INFORMATION
Device Marking Shipping
L2SC2412KQLT1
L2SC2412KQLT1G
IC PC Tj T stg
BQ
BQ(Pb-Free)
3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel
L2SC2412KRLT1
L2SC2412KRLT1G
BR
BR(Pb-Free)
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
L2SC2412KSLT1
G1F
L2SC2412KSLT1G G1F(Pb-Free)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic Collector-Emitter Breakdown Voltage (IC = 1 mA) Emitter-Base Breakdown Voltage (IE = 50 A) Collector-Base Breakdown Voltage (IC = 50 A) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= - 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE fT C ob -- 120 -- -- -- -- 180 2.0 0.4 560 -- 3.5 V -- MHz pF Symbol V V V
(BR)CEO
Min 50 7 60 -- --
Typ -- -- -- -- --
Max -- -- -- 0.1 0.1
Unit V V V A A
(BR)EBO
(BR)CBO
I CBO I EBO
h FE values are classified as follows:
hFE
*
Q 120~270
R 180~390
S 270~560
L2SC2412K*LT1-1/3
LESHAN RADIO COMPANY, LTD.
L2SC2412K*LT1
Fig.1 Grounded emitter propagation characteristics
50
Fig.2 Grounded emitter output characteristics( )
100
0.50mA
T A = 25C
VCE= 6 V
20
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
80
10 50
T A = 100 C
25C
60
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2 1
- 55C
40
0.5
20
0.2 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 0 0.4 0.8 1.2 1.6 2.0
V BE , BASE TO EMITTER VOLTAGE(V)
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
10
Fig.4 DC current gain vs. collector current ( )
500
I C, COLLECTOR CURRENT (mA)
8
6
h FE, DC CURRENT GAIN
0 4 8 12 16 20
200
100
4
50
2
20
0 10 0.2 0.5 1 2 5 10 20 50 100 200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs. collector current
0.5
500
0.2
h FE, DC CURRENT GAIN
200
0.1
100
0.05
50
0.02
20
0.01 0.2 0.5 1 2 5 10 20 50 100 200
10 0.2 0.5 1 2 5 10 20 50 100 200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
L2SC2412K*LT1-2/3
LESHAN RADIO COMPANY, LTD.
L2S2412K*LT1
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
0.5
Fig.8 Collector-emitter saturation voltage vs. collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
0.5
0.2
0.2
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0.1
0.1
0.05
0.05
0.02
0.02
0.01 0.2 0.5 1 2 5 10 20 50 100 200
0.01 0.2 0.5 1 2 5 10 20 50 100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage
C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF)
20
f r , TRANSITION FREQUENCY(MHz)
500
10
200
5
100
2
50 -0.5 -1 -2 -5 -10 -20 -50 -100
1 0.2 0.5 1 2 5 10 20 50
I E, EMITTER CURRENT (mA)
V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V)
Fig.11 Base-collector time constant vs.emitter current
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
200
100
50
20
10 -0.2 -0.5 -1 -2 -5 -10
I E, EMITTER CURRENT (mA)
L2SC2412K*LT1-3/3

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